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| PD - 96312 IRF9362PBF HEXFET(R) Power MOSFET VDS RDS(on) max (@VGS = -10V) -30 21.0 32.0 13 -8.0 V m m nC A S2 1 G2 2 S1 3 G4 1 8 D2 7 D2 6 D1 5 D1 RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25C) SO-8 Applications * Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Features Industry-Standard SO-8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Resulting Benefits results in Multi-Vendor Compatibility Environmentally Friendlier Orderable part number IRF9362PBF IRF9362TRPbF Package Type SO8 SO8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Note Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Max. -30 20 -8.0 -6.4 -64 2.0 1.3 0.016 -55 to + 150 Units V f Power Dissipation f c A W W/C C Linear Derating Factor Operating Junction and Storage Temperature Range Notes through are on page 2 www.irf.com 1 06/25/10 IRF9362PBF Static @ TJ = 25C (unless otherwise specified) Parameter BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Min. -30 --- --- --- -1.3 --- --- --- --- --- 12 --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.021 17.0 25.7 -1.8 -5.8 --- --- --- --- --- 13 26 3.8 6.3 17 5.2 5.9 115 53 1300 250 170 Max. --- --- 21.0 32.0 -2.4 --- -1.0 -150 -100 100 --- --- 39 --- --- --- --- --- --- --- --- --- --- Typ. --- --- Units V V/C m V mV/C A nA S nC nC Conditions VGS = 0V, ID = -250A Reference to 25C, ID = -1mA VGS = -10V, ID = -8.0A VGS = -4.5V, ID = -6.4A VDS = VGS, ID = -25A VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VDS = -10V, ID = -6.4A VDS = -15V, VGS = -4.5V, ID = - 6.4A VGS = -10V VDS = -15V ID = -6.4A VDD = -30V, VGS = -10V e e h Total Gate Charge h Total Gate Charge Gate Resistance Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time h h h ns ID = -1.0A RG = 6.0 See Figs. 19a & 19b VGS = 0V e pF VDS = -25V = 1.0kHz Max. 94 -6.4 Units mJ A Reverse Transfer Capacitance Parameter Avalanche Characteristics EAS IAR Single Pulse Avalanche Energy Avalanche Current Diode Characteristics Parameter IS ISM VSD trr Qrr (Body Diode) d Min. --- --- --- --- --- Typ. --- --- --- 32 20 Max. -2.0 Units A Conditions MOSFET symbol showing the integral reverse p-n junction diode. G S D Continuous Source Current Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -64 -1.2 48 30 Typ. --- --- V ns nC TJ = 25C, IS = -2.0A, VGS = 0V di/dt = 100/s Max. 20 62.5 e TJ = 25C, IF = -2.0A, VDD = -24V Thermal Resistance Parameter RJL RJA Junction-to-Drain Lead Junction-to-Ambient e f g Units C/W Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 4.6mH, RG = 25, IAS = -6.4A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. R is measured at TJ of approximately 90C. For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com IRF9362PBF 100 TOP VGS -10V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V -2.5V 100 TOP VGS -10V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V -2.5V -ID, Drain-to-Source Current (A) 10 BOTTOM -ID, Drain-to-Source Current (A) 10 BOTTOM 1 0.1 -2.5V 1 -2.5V 60s PULSE WIDTH Tj = 25C 0.01 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V) 60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 RDS(on) , Drain-to-Source On Resistance (Normalized) Fig 2. Typical Output Characteristics 1.6 ID = -8.0A 1.4 VGS = -10V -I D, Drain-to-Source Current (A) 10 1.2 T J = 150C 1 TJ = 25C 1.0 0.8 0.1 1 2 3 VDS = -15V 60s PULSE WIDTH 4 5 6 0.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) -V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 10000 VGS = 0V, f = 1 KHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd Fig 4. Normalized On-Resistance vs. Temperature 14.0 ID= -6.4A -V GS, Gate-to-Source Voltage (V) 12.0 10.0 8.0 6.0 4.0 2.0 0.0 C, Capacitance (pF) VDS= -24V VDS= -15V Ciss 1000 Coss Crss VDS= -6.0V 100 1 10 -VDS, Drain-to-Source Voltage (V) 100 0 10 20 30 40 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage www.irf.com 3 IRF9362PBF 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec 1msec 10 10msec -I D, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) 100 T J = 150C 10 T J = 25C DC 1 T A = 25C 0.1 Tj = 150C Single Pulse 0.01 0.1 1 10 100 VGS = 0V 1.0 0.3 0.5 0.7 0.9 1.1 1.3 -VSD, Source-to-Drain Voltage (V) -VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 8 -V GS(th), Gate threshold Voltage (V) Fig 8. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 ID = -25A -I D, Drain Current (A) 6 4 2 0 25 50 75 100 125 150 T A , Ambient Temperature (C) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 9. Maximum Drain Current vs. Ambient Temperature 100 D = 0.50 Thermal Response ( Z thJA ) C/W Fig 10. Threshold Voltage vs. Temperature 10 1 0.20 0.10 0.05 0.02 0.01 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 0.001 0.01 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 1 10 100 0.001 1E-006 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com IRF9362PBF ID = -8.0A 50 40 30 20 10 0 2 4 6 8 10 12 14 16 18 20 T J = 25C RDS(on), Drain-to -Source On Resistance ( m) RDS(on), Drain-to -Source On Resistance (m ) 60 80 70 60 Vgs = -4.5V 50 40 30 20 10 0 0 10 20 30 40 50 60 70 -I D, Drain Current (A) Vgs = -10V T J = 125C Fig 12. On-Resistance vs. Gate Voltage 400 EAS , Single Pulse Avalanche Energy (mJ) -V GS, Gate -to -Source Voltage (V) Fig 13. Typical On-Resistance vs. Drain Current 1000 Single Pulse Power (W) 300 ID TOP -1.8A -2.6A BOTTOM -6.4A 800 600 200 400 100 200 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) 0 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 Time (sec) Fig 14. Maximum Avalanche Energy vs. Drain Current Fig 15. Typical Power vs. Time D.U.T * Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt - - + RG * * * * di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Body Diode Forward Drop Inductor Curent Inductor Current Ripple 5% ISD * Reverse Polarity of D.U.T for P-Channel * VGS = 5V for Logic Level Devices www.irf.com Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET(R) Power MOSFETs 5 IRF9362PBF Id Vds Vgs L 0 DUT 20K 1K S S VCC Vgs(th) Qgodr Qgd Qgs2 Qgs1 Fig 17a. Gate Charge Test Circuit Fig 17b. Gate Charge Waveform VDS L I AS RG -V GS -20V D.U.T IAS DRIVER 0.01 VDD A tp tp V(BR)DSS 15V Fig 18a. Unclamped Inductive Test Circuit Fig 18b. Unclamped Inductive Waveforms VDS VGS RG RD td(on) tr t d(off) tf D.U.T. VGS 10% + -VGS Pulse Width 1 s Duty Factor 0.1 % Fig 19a. Switching Time Test Circuit 6 - V DD 90% VDS Fig 19b. Switching Time Waveforms www.irf.com IRF9362PBF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e K L y e1 A K x 45 C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 CAB 8X L 7 FOOT PRINT NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES]. 4. OUT LINE CONF ORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD F OR S OLDERING T O A S UBS T RAT E. 8X 0.72 [.028] 6.46 [.255] 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) DAT E CODE (YWW) P = DIS GNAT ES LEAD - FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 7 IRF9362PBF SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Qualification Information Qualification level Consumer (per JEDEC JESD47F guidelines) SO-8 Yes MSL1 (per JEDEC J-STD-020D) Moisture Sensitivity Level RoHS Compliant Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/2010 8 www.irf.com |
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